Ao3401 транзистор чем заменить
Ao3401 транзистор чем заменить
Наименование прибора: 3401
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 1.2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 4.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
3401 Datasheet (PDF)
0.3. mch3401.pdf Size:41K _sanyo
Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings
GaAs HJ-FET L TO S BANDLOW NOISE AMPLIFIERNE34018(New Plastic Package)NOISE FIGURE & ASSOCIATEDFEATURESGAIN vs. FREQUENCYVDS = 3 V, IDS = 20 mA LOW COST MINIATURE PLASTIC PACKAGE252544(SOT-343)2020 LOW NOISE FIGURE:GA0.6 dB typical at 2 GHz151533 HIGH ASSOCIATED GAIN:101016.0 dB typical at 2 GHz LG = 0.6 2 5m, WG
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
0.9. smg3401.pdf Size:515K _secos
0.10. tsm3401cx.pdf Size:235K _taiwansemi
0.11. cj3401.pdf Size:377K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25 unless otherwise noted
0.12. cj3401-hf.pdf Size:114K _jiangsu
0.13. cj3401a.pdf Size:1001K _jiangsu
0.14. cjk3401a.pdf Size:780K _jiangsu
0.15. cjk3401ah.pdf Size:1634K _jiangsu
0.16. ao3401.pdf Size:1439K _htsemi
0.17. gm3401.pdf Size:371K _gsme
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3401SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET
0.18. ao3401.pdf Size:1540K _lge
AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)
0.19. wtc3401.pdf Size:1489K _wietron
0.20. se3401.pdf Size:454K _willas
0.21. wpm3401.pdf Size:1316K _willsemi
0.22. ao3401.pdf Size:497K _aosemi
0.23. ao3401a.pdf Size:231K _aosemi
0.24. afp3401as.pdf Size:766K _alfa-mos
0.25. afp3401s.pdf Size:634K _alfa-mos
0.26. ao3401.pdf Size:1476K _shenzhen
0.27. mtp3401n3.pdf Size:421K _cystek
0.28. 3401.pdf Size:1135K _goford
0.29. 3401a.pdf Size:1595K _goford
0.30. 3401l.pdf Size:1381K _goford
0.31. sts3401a.pdf Size:95K _samhop
0.32. sts3401.pdf Size:132K _samhop
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-3 Plastic-Encapsulate Transistors 3401 MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source volta
0.34. ao3401.pdf Size:771K _blue-rocket-elect
0.35. brcs3401mc.pdf Size:735K _blue-rocket-elect
0.36. mmftp3401.pdf Size:428K _semtech
LESHAN RADIO COMPANY, LTD.30V P-Channel Enhancement-Mode MOSFETLP3401LT1GAPPLICATIONS1)Advanced trench process technology2)High Density Cell Design For Ultra Low On-Resistance.33)We declare that the material of product compliant with RoHS requirements and Halogen Free.1FEATURES 22)RDS(ON)
SM3401NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3×3.3-8(Saw-EP) Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Com
0.40. wpm3401.pdf Size:439K _tysemi
Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co
0.41. ftk3401.pdf Size:236K _first_silicon
0.42. ao3401a-3.pdf Size:1320K _kexin
0.43. ao3401hf.pdf Size:1580K _kexin
0.44. ao3401.pdf Size:1535K _kexin
0.46. ao3401a.pdf Size:1315K _kexin
0.47. ao3401-3.pdf Size:1562K _kexin
0.48. ko3401.pdf Size:1515K _kexin
SMD Type MOSFETP-Channel Enhancement MOSFET KO3401 SOT-89Unit:mm Features1.70 0.1 VDS (V) =-30V A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V)D0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.11.GateG2.DrainS3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source
0.49. pja3401.pdf Size:194K _panjit
0.50. ppja3401a.pdf Size:544K _panjit
0.51. am3401.pdf Size:555K _ait_semi
0.52. blm3401a.pdf Size:190K _belling
0.53. blm3401.pdf Size:283K _belling
Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate resistance. Rds(on)
Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate (Vgs=-10V)resistance. Rds(on)
Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate resistance. Rds(on)
0.57. gsm3401as.pdf Size:612K _globaltech_semi
0.58. gsm3401s.pdf Size:1426K _globaltech_semi
0.59. kia3401.pdf Size:107K _kia
0.60. mmp3401.pdf Size:147K _m-mos
0.61. stp3401a.pdf Size:372K _semtron
0.62. stp3401.pdf Size:372K _semtron
0.63. smc3401.pdf Size:372K _semtron
0.64. st3401srg.pdf Size:206K _stansontech
0.65. st3401m23rg.pdf Size:169K _stansontech
0.66. ap3401.pdf Size:2303K _allpower
0.67. asdm3401zb.pdf Size:558K _ascend
0.68. ao3401a.pdf Size:1984K _born
0.69. ev3401.pdf Size:623K _eternal
0.70. as3401.pdf Size:2093K _fms
0.72. ao3401.pdf Size:627K _guangdong_hottech
0.73. hss3401a.pdf Size:517K _huashuo
0.74. ao3401a.pdf Size:468K _huashuo
0.77. jmtl3401a.pdf Size:186K _jiejie_micro
JMTL3401A Description JMT P-channel MOSFET Features Application V =-30V, I =-4.2A PWM Applications DS D R
0.78. se3401.pdf Size:1480K _leiditech
0.79. jst3401.pdf Size:640K _jestek
0.80. jsm3401l.pdf Size:546K _jsmsemi
JSM3401LP-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.053@-10V3-30V 0.065@-4.5V 1.GATE-4.2A2.SOURCE0.085@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA19TF wAPPLICATION*wweek codeLoad Switch for Portable DevicesDC/DC ConverterMaximu
0.81. lpm3401.pdf Size:375K _lowpower
0.82. ao3401.pdf Size:1887K _mdd
0.83. ao3401mi-ms.pdf Size:573K _msksemi
0.84. si3401.pdf Size:988K _cn_szxunrui
SOT-23 Plastic-Encapsulate MOSFETSSI3401P-Channel 30-V(D-S) MOSFETSI3401V(BR)DSS RDS(on)MAX IDSOT-230.060@-10V3-30V 0.070@-4.5V 1.GATE-4.0A2.SOURCE0.100@-2.5V3.DRAIN12MARKING Equivalent CircuitGeneral FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageA11TF wAPPLICATION*wweek codeLoad Switch for Porta
0.85. pjm3401psc.pdf Size:3580K _pjsemi
0.86. pjm3401psa.pdf Size:2604K _pjsemi
PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint
0.87. sr3401.pdf Size:757K _cn_salltech
0.88. ao3401.pdf Size:1425K _cn_puolop
0.89. ao3401.pdf Size:453K _cn_shikues
0.90. pm3401.pdf Size:354K _pn_silicon
PM3401 30V P-Channel MOSFET Description Applications The PM3401 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. MOSFET Product Summary Features V R I (BR)DSS DS(ON
Ao3401 транзистор чем заменить
Наименование прибора: 3401A
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 1.3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Максимально допустимый постоянный ток стока |Id|: 4.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.052 Ohm
3401A Datasheet (PDF)
0.3. cj3401a.pdf Size:1001K _jiangsu
0.4. cjk3401a.pdf Size:780K _jiangsu
0.5. cjk3401ah.pdf Size:1634K _jiangsu
0.6. ao3401a.pdf Size:231K _aosemi
0.7. afp3401as.pdf Size:766K _alfa-mos
0.8. 3401a.pdf Size:1595K _goford
0.9. sts3401a.pdf Size:95K _samhop
0.10. ao3401a-3.pdf Size:1320K _kexin
0.11. ao3401a.pdf Size:1315K _kexin
0.12. ppja3401a.pdf Size:544K _panjit
0.13. blm3401a.pdf Size:190K _belling
0.14. gsm3401as.pdf Size:612K _globaltech_semi
0.15. stp3401a.pdf Size:372K _semtron
0.16. ao3401a.pdf Size:1984K _born
0.17. hss3401a.pdf Size:517K _huashuo
0.18. ao3401a.pdf Size:468K _huashuo
0.20. jmtl3401a.pdf Size:186K _jiejie_micro
JMTL3401A Description JMT P-channel MOSFET Features Application V =-30V, I =-4.2A PWM Applications DS D R
Ao3401 транзистор чем заменить
Наименование прибора: AO3400
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.45 V
Максимально допустимый постоянный ток стока |Id|: 5.8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SOT233L
AO3400 Datasheet (PDF)
0.1. ao3400.pdf Size:1848K _htsemi
AO340030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A
0.2. ao3400.pdf Size:2141K _lge
AO3400N-Channel 30V(D-S) MOSFETDESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 1
0.3. ao3400c.pdf Size:342K _aosemi
AO3400C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)
0.4. ao3400a.pdf Size:471K _aosemi
AO3400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
0.5. ao3400.pdf Size:472K _aosemi
AO340030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.8Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
0.6. ao3400.pdf Size:1266K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400AO3400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3400 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)
0.7. ao3400.pdf Size:781K _blue-rocket-elect
AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V A (VGS = 10V) RDS(ON)
SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3400(AO3400)SOT-23Unit: mm+0.1Features 2.9-0.1+0.10.4-0.1VDS (V) = 30V3ID =5.8 A(VGS =10V)RDS(ON) 28m (VGS = 10V)12RDS(ON) 33m (VGS =4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 52m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maxim
0.9. ao3400-3.pdf Size:1190K _kexin
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0.13. ao3400a.pdf Size:2049K _born
AO3400AMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV 30 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous) 5.8 AIDDrain Current (pulsed) I 30 ADMTotal Device Dissipat
0.14. ao3400.pdf Size:591K _guangdong_hottech
Plastic-Encapsulate MosfetsAO3400FEATURESN-Channel MOSFETThe AO3400 is the N-Channel logic enhancement mode powerfield effect transistor is produced using high cell density, DMOStrench technology.This high-density process is especially tailored to minimize on-stateresistance. These devices are particularly suited for low voltage applicationsuch as cellular phone and notebook c
0.15. ao3400a.pdf Size:407K _huashuo
AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve
0.16. ao3400mi-ms.pdf Size:602K _msksemi
www.msksemi.comAO3400MI-MSSemiconductor CompianceSOT-23FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability1. GATE2. SOURCEAPPLICATION3. DRAIN Load/Power Switching Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D35m@ 10V40m@4.5V30 V5.8A52m@2.5VMaximum ratin
0.17. ao3400.pdf Size:1535K _cn_puolop
AO3400 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A
0.18. ao3400.pdf Size:656K _cn_shikues